The MM-6710F is a high-speed static memory module designed for VME/VME64 environments requiring mission-critical data integrity and consistent read/write performance. Built on SRAM architecture, this Curtiss-Wright module delivers rapid data access for aerospace, defense, and industrial automation systems that cannot tolerate latency or storage failures.
## Technical Specifications
• **Memory Technology:** High-Speed Static RAM (SRAM)
• **Form Factor:** VME/VME64 module
• **Bus Interface:** VME and VME64 standards with block transfer support—BLT (256 bytes for VME) and MBLT (2KB for VME64)
• **Address Selection:** Module selection on 1MB boundaries, switch-selectable
• **Operating Temperature:** 0 to +65°C
• **Storage Temperature:** -40 to +85°C
• **Relative Humidity:** 95% without condensation
• **Data Retention:** CMOS NVRAM modules incorporate on-board redundant batteries (lithium or NiCad) supporting up to 3 years retention with lithium cells
• **Reliability Testing:** Modules undergo 48-hour burn-in with memory diagnostics and temperature cycling between 0 and 65°C
## Key Features
• VMEbus and VME64 compatibility for direct integration into existing architectures
• Static memory design eliminates refresh requirements and simplifies system timing
• Switch-selectable addressing accommodates flexible memory mapping in multi-module configurations
• Block transfer capabilities maximize throughput for high-bandwidth operations
• Battery-backed CMOS NVRAM option extends data retention across power cycles
## Typical Applications
• Aerospace flight instrumentation and telemetry systems
• Defense signal processing and radar platforms
• Industrial automation controllers and data logging
• Real-time embedded systems requiring deterministic memory access
## Compatibility & Integration
The MM-6710F integrates directly into VMEbus and VME64 backplanes without adapter logic. Switch-configurable address boundaries enable multi-module stacking within a single chassis.
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